LPT-7 Diode-Pumped Solid-State Laser Demonstrator
Spesifikaasjes
Semiconductor Laser | |
CW Output Power | ≤ 500 mW |
Polarisaasje | TE |
Center golflingte | 808 ± 10 nm |
Operaasje Temperatur Range | 10 ~ 40 °C |
Driving Aktuele | 0 ~ 500 mA |
Nd: YVO4Kristal | |
Nd Doping Konsintraasje | 0.1 ~ 3 atm% |
Diminsje | 3×3×1 mm |
Flatens | < λ/10 @632.8 nm |
Coating | AR@1064 nm, R<0,1%;808="" t="">90% |
KTP Crystal | |
Transmissive golflingteberik | 0,35 ~ 4,5 µm |
Electro-Optic Coefficient | r33=36 pm/V |
Diminsje | 2×2×5 mm |
Utfier Mirror | |
Diameter | Φ 6 mm |
Radius of Curvature | 50 mm |
He-Ne Alignment Laser | ≤ 1 mW @ 632,8 nm |
IR Viewing Card | Spektrale antwurdberik: 0,7 ~ 1,6 µm |
Laser Safety Goggles | OD = 4+ foar 808 nm en 1064 nm |
Optical Power Meter | 2 μW ~ 200 mW, 6 skalen |
PARTS LIST
Nee. | Beskriuwing | Parameter | Oantal |
1 | Optical Rail | mei basis en stof cover, He-Ne laser Netzteil wurdt ynstallearre binnen basis | 1 |
2 | He-Ne Laser Holder | mei ferfierder | 1 |
3 | Alignment Aperture | f1 mm gat mei drager | 1 |
4 | Filter | f10 mm diafragma mei drager | 1 |
5 | Utfier Mirror | BK7, f6 mm R =50 mm mei 4-assige ferstelbere holder en drager | 1 |
6 | KTP Crystal | 2 × 2 × 5 mm mei 2-as ferstelbere holder en drager | 1 |
7 | Nd: YVO4 Kristal | 3 × 3 × 1 mm mei 2-as ferstelbere holder en drager | 1 |
8 | 808nm LD (laserdiode) | ≤ 500 mW mei 4-as ferstelbere holder en drager | 1 |
9 | Detector Head Holder | mei ferfierder | 1 |
10 | Infrarot Viewing Card | 750 ~ 1600 nm | 1 |
11 | He-Ne Laser Tube | 1.5mW@632.8 nm | 1 |
12 | Optical Power Meter | 2 μw~200 mW (6 berik) | 1 |
13 | Detector Head | mei omslach en post | 1 |
14 | LD Aktuele Controller | 0 ~ 500 mA | 1 |
15 | Stroomtried | 3 | |
16 | Gebrûksoanwizing | V1.0 | 1 |
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